Gallium nitride (GaN) is a material that can be used in the production of semiconductor power devices as well as RF components and light emitting diodes (LEDs). GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analog applications.

Here’s Leo Laporte with Alex Lidow from Efficient Power Conversion to tell you about the potential of this material making faster and more effisient products.